Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)  

Key Features

  • Independent control of ion energy and ion current density
  • Typical process pressure: 1- 10 mtorr
  • Plasma density: circa 5 x E11 / cm2
  • Plasma in contact with the substrate
  • Low energy ion current during deposition
  • Ion Current (Plasma Density) dependent on ICP power
  • ESS (electrostatic screen) for a purely inductive plasma
  • ICP is fully automatic (2 RF automatch units)

Typical Applications of ICP CVD:

  • Low temperature deposition for lift off technology
  • Low temperature deposition of very high quality SiO2
  • Low temperature deposition of polySi
Feature PlasmaPro 80 ICPCVD65 PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300
Electrode size 240mm
Wafer size Up to 200mm
Loading Open Load Load locked or cassette
Substrates 50mm wafers 150mm with carriers options available for multi-wafers or small pieces 200mm with carriers options available for multi-wafers or small pieces
Dopants No Various dopants available which include PH3, B2H6, GeH4
Liquid Precursors No
MFC controlled gaslines 8 or 12 line gas box available
Wafer stage temperature range 20°C to 400°C 0°C to 400°C
Insitu plasma clean Yes

For details on ICP CVD on >200mm samples please contact us.

ICP-CVD Chamber Clean

Our ICP-CVD cleaning regime was developed to give reproducible deposition and low particles between mechanical cleans

Benefits:

  • Reduced cleaning time
  • Higher utilisation through optional interleaved clean
  • Accurate endpoint resulting in reduced over-etch of chamber components and increasing their lifetime

High Rate Clean Process Features
  • System Utilisation >70%
  • SF6 /N2O gas mixture
  • Improved End Point control
  • New Plasma clean results in increased optical intensity with greater endpoint signal/resolution
  • New plasma clean results in 68% reduction in plasma clean time compared to the standard clean
  • Actual plasma clean time depends on film material, film quality and film thickness

Interleaved Clean Mode

  • High utilisation
  • Highly repeatable deposition rate
  • Low added particle counts maintained with clean after every wafer
  • > 50 microns between mechanical cleans