Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)  

Key Features

  • Independent control of ion energy and ion current density
  • Typical process pressure: 1- 10 mtorr
  • Plasma density: circa 5 x E11 / cm2
  • Plasma in contact with the substrate
  • Low energy ion current during deposition
  • Ion Current (Plasma Density) dependent on ICP power
  • ESS (electrostatic screen) for a purely inductive plasma

Typical Applications of ICP CVD:

  • Low temperature deposition for lift off technology
  • Low temperature deposition of very high quality SiO2
  • Low temperature deposition of polySi
  • ICP is fully automatic (2 RF automatch units)

 

ICP CVD Systems & Features

Feature PlasmaPro 80 ICPCVD65 PlasmaPro 100 ICPCVD180 PlasmaPro 133 ICPCVD380
Electrode size 240mm 240mm 330mm
Wafer size Up to 200mm Up to 200mm Up to 300mm
Loading Open Load Load locked Load locked
Substrates 50mm wafers 150mm with carriers options available for multi-wafers or small pieces 200mm with carriers options available for multi-wafers or small pieces
Dopants No Various dopants available which include PH3, B2H6, GeH4 Various dopants available which include PH3, B2H6, GeH4
Liquid Precursors No No No
MFC controlled gaslines 8 or 12 line gas box available 8 or 12 line gas box available 8 or 12 line gas box available
Wafer stage temperature range 20°C to 400°C 0°C to 400°C 0°C to 400°C
Insitu plasma clean Yes Yes Yes