Reactive Ion Etch (RIE)

Key features

  • Gas injected into process chamber via “showerhead” gas inlet in the top electrode
  • Negative self-bias forms on lower electrode
  • Single RF plasma source determines both ion density and energy
  • Substrate is usually placed on a quartz or graphite “coverplate” to avoid sputtering/re-deposition of electrode material
  • 5-500 mTorr operating pressure   

Benefits of RIE

  • Economical solution for general plasma etching
  • Simple operation
  • Multiple choices of etch processes:
  • Chemical etch – isotropic, fast rate
  • Ion induced etch – anisotropic, medium rate
  • Physical etch – anisotropic, slow rate
  • Wide applications in semiconductor de-processing and failure analysis
  • Wide range of materials can be etched, including:
  • Dielectric materials (SiO2, SiNx, etc.)
  • Silicon-based materials (Si, a-Si, poly-Si)
  • III-V materials (GaAs, InP, GaN, etc.)
  • Sputtered metals (Au, Pt, Ti, Ta, W, etc.)
  • Diamond-like carbon (DLC)

RIE System Features

Features of the PlasmaPro RIE product family

Feature                    PlasmaPro 80 RIE PlasmaPro 800 RIE PlasmaPro 100 RIE PlasmaPro 133 RIE
Electrode Size 240mm 460mm 240mm 330mm
Loading Open Load Open Load Load Locked Load Locked
Substrates See product brochure See product brochure 200mm with carriers options available for multi-wafers or small pieces 300mm with carriers options available for multi-wafers or small pieces
MFC controlled gaslines 8 or 12 line gas box available 8 or 12 line gas box available 8 or 12 line gas box available 8 or 12 line gas box available
Wafer stage temperature range 10-80C°  10-80C° Minus 20C° to 80C° Minus 20C° to 80C°
He Back side cooling option  yes no yes no
ICP Option yes no no no
Focused Plasma yes yes no no