Silicon Carbide (SiC) Deposition

SiC may be deposited using the following process types:

Silicon Carbide (SiC) PECVD

Silicon Carbide (SiC) PECVD

SiC may be deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD)

  PlasmaPro 80 PECVD PlasmaPro 100 PECVD PlasmaPro 800 PECVD Please contact us for details
Deposition Rate > 5nm - > 50nm/min
Uniformity from < ± 2% to < ± 5% dependant on wafer size
Stress <300MPa compressive
Single wafer size up to 200mm up to 300mm up to 450mm
Batch Size up to 9 x 2", 4 x 3" up to 43 x 2”, 19 x 3”, 10 x 100mm”, 7 x 120mm”, 4 x 150mm”, 2 x 200mm”  

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Carbide (SiC) ICP CVD

Silicon Carbide (SiC) ICP CVD

SiC may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD)

  PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300 Please contact us for details
Deposition rate: > 5nm/min
Uniformity: from < ± 2% to < ± 5% dependant on wafer size
Refractive Index: 2.6 (controllable range 2.4-2.7)
Single wafer size: up to 150mm up to 200mm up to 300mm
Batch size: Up to 5 x 2" Up to 6 x 2”  
Stress: <-300MPa compressive

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.