Silicon Carbide (SiC) Deposition

SiC may be deposited using the following process types:

Silicon Carbide (SiC) PECVD

Silicon Carbide (SiC) PECVD

SiC may be deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD).

  PlasmaPro NGP80 PECVD PlasmaPro 100 PECVD PlasmaPro System133 PECVD PlasmaPro 800Plus PECVD
Deposition Rate > 5nm - > 50nm/min > 5nm - > 50nm/min > 5nm - > 50nm/min > 5nm - > 50nm/min
Uniformity from < ± 2% to < ± 5% dependant on wafer size from < ± 2% to < ± 5% dependant on wafer size from < ± 2% to < ± 5% dependant on wafer size from < ± 2% to < ± 5% dependant on wafer size
Stress <300MPa compressive <300MPa compressive <300MPa compressive <300MPa compressive
Single Wafer Size up to 200mm up to 200mm up to 300mm up to 300mm
Batch Size up to 9 x 2", 4 x 3" up to 9 x 2", 4 x 3" up to 22 x 2”, 9 x3”,
5 x 100mm, 3 x 120mm
up to 43 x 2”, 19 x 3”
10 x 100mm”, 7 x 120mm”, 4 x 150mm”
2 x 200mm”

 

Silicon Carbide (SiC) ICP CVD

Silicon Carbide (SiC) ICP CVD

SiC may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD).

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380
Deposition rate: > 5nm/min > 5nm/min
Uniformity: from < ± 2% to < ± 5% dependant on wafer size from < ± 2% to < ± 5% dependant on wafer size
Refractive Index: 2.6 (controllable range 2.4-2.7) 2.6 (controllable range 2.4-2.7)
Single wafer size: up to 150mm up to 200mm
Batch size: Up to 5 x 2" Up to 9 x 2”, 4 x 3”, 2 x 100mm
Stress: <-300MPa compressive <-300MPa compressive