Aluminium Oxide (Al2O3) Etching

Al2O3 may be dry etched using the following process types:

Aluminium Oxide (Al2O3) ICP Etching

Aluminium Oxide (Al2O3) ICP Etching

Al2O3 and related films may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

SEM image shows 80° Wall etching in sapphire


Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 133 Cobra380
Etch rate: > 65 nm/min > 65 nm/min
Uniformity: < ± 5 % < ± 5 %
Selectivity to Ni: > 5:1 > 5:1
Wafer size: Up to 100mm Up to 150mm
Batch sizes: - Up to 18 x 2", 5 x 100mm"



Aluminium Oxide (Al2O3) Ion Beam Etching (IBE)

Aluminium Oxide (Al2O3) Ion Beam Etch (IBE)

Al2O3 may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process features

  • Process gases: Ar, CHF3, O2
  • Al2O3 etch with rotation and adjustable tilt





Summary performance data

Chamber base pressurea <3e-7 Torr
Load lock base pressureb   <1e-5 Torr

a. After 12 hours bake out at 80°C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

  Ionfab300Plus (LC)
Typical etch rate [nm/min]: 10nm/min
Uniformity3: < 3
Selectivity to PR: > 1
Wafer size: up to 200mm


1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
3. With 5mm edge exclusion

Patterned Sapphire Substrate (PSS) Etch for LED

Patterned Sapphire Substrate (PSS) etch using the PlasmaPro 100 Polaris tool

Single wafer etch solutions for PSS and GaN in the HBLED market

  • Presenting an evolution in single wafer etch technology. With extensive experience of etching materials, our technologies enable the cost of ownership and yield required to maximise the performance of your devices.
  PlasmaPro 100 Polaris
Wafer size: 100mm & 150mm
Etch rate: > 150nm/min
Uniformity: < ±3% (3mm edge exclusion)
Selectivity to PR: > 0.9:1

View our PSS webinar

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