Aluminium Oxide (Al2O3) ICP Etching

Al2O3 and related films may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

SEM image shows 80° Wall etching in sapphire

 

Process Specification

  PlasmaPro100 ICP180 PlasmaPro133 ICP380
Etch rate: > 65 nm/min > 65 nm/min
Uniformity: < ± 5 % < ± 5 %
Selectivity to Ni: > 5:1 > 5:1
Wafer size: Up to 100mm Up to 150mm
Batch sizes: - Up to 18 x 2", 5 x 100mm"