80° Wall etching in sapphireAluminium Oxide (Al2O3) ICP Etching

Al2O3 and related films may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Polaris
Etch rate: > 65 nm/min > 80 nm/min > 150 nm/min
Uniformity: < ± 5 % < ± 3 %
Selectivity to PR: > 0.7:1
Wafer size: Up to 100mm Up to 150mm
Batch sizes: - Up to 6 x 2" -

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.