Tantalum Pentoxide (Ta2O5) ICP Etching

Ta2O5 may be dry etched using the Inductively Coupled Plasma (ICP) process technique. Process features include; fluorinated gas based processes and RIE-biased and temperature-controlled wafer electrode.

SEM image shows photonic crystal holes etched in Ta2O5 using ZEP520 mask
 

Process Specification

  PlasmaPro 100 Cobra180
Etch rate: >80nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 1:1
Selectivity to Cr: > 8:1
Wafer size: Up to 100mm

 

Related Process Techniques

Measure Both Elastic & Viscous Properties with AFM Using Asylum Research’s Exclusive AM-FM Viscoelastic Mapping Mode http://t.co/Gsc5auGUhu
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