Tantalum Pentoxide (Ta2O5) ICP Etching

Ta2O5 may be dry etched using the Inductively Coupled Plasma (ICP) process technique. Process features include; fluorinated gas based processes and RIE-biased and temperature-controlled wafer electrode.

SEM image shows photonic crystal holes etched in Ta2O5 using ZEP520 mask

Process Specification

  PlasmaPro 100 Cobra180
Etch rate: >80nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 1:1
Selectivity to Cr: > 8:1
Wafer size: Up to 100mm


Related Process Techniques

WindowsXP end of support! We can help with upgrade kits and migration packages for XRF, OES and NMR instruments http://t.co/OKBct3fzx8
11:43 AM - 24 Oct 14
View more of our tweets