Remote plasma & thermal ALD in one flexible tool

The FlexAL® systems provide a new range of flexibility and capability in the engineering of nanoscale structures and devices by offering remote plasma atomic layer deposition (ALD) processes and thermal ALD within a single ALD system.

The FlexAL system delivers:

  • Maximum flexibility in the choice of materials and precursors
  • Low-temperature processes enabled by plasma ALD
  • Low damage maintained by the use of remote plasma
  • Controllable, repeatable processes via recipe-driven software interface
  • Can be configured for both R&D and Production environments

Download the brochure...

ALD Brochure

Atomic layer deposition process solutions

PDF 1.02MB

System Features and Benefits

FlexAL System Benefits:

  • Ability to handle from small wafer pieces up to full 200mm wafers
  • Load-locked wafer entry for low particle count and short loading-to-process-start time
  • Integral glove box on precursor modules for in-situ change-over
  • Integral ports to allow the addition of in-situ ellipsometry measurement tools
  • May be integrated in cluster system with other process tools, including Oxford Instruments PlasmaPro 100 range of etch and deposition tools
  • Licensed technology from ASM International NV

Key Features

  • Remote plasma & thermal ALD in one flexible tool
  • Automated 200mm load lock for process flexibility
  • Clusterable for vacuum transfer of substrates
  • Cassette to cassette handling increases throughput suitable for production
  • Hex handler with robot and 25 wafer cassette for 100mm, 150mm or 200mm wafers (no tools required to swap between wafers)
  • All configurations can be located entirely within the cleanroom or through-the-wall

ALD Tool Comparison

Tool Comparison - FlexAL and OpAL:

Feature OpAL® FlexAL®
Substrates Up to 200mm wafers & pieces directly on stage Up to 200mm wafers handling and pieces on a carrier plate
Bubbled liquid & solid precursors Up to 4 plus water, ozone and gases Up to 8 plus water, ozone and gases
Max precursor source temperature 200ºC 200ºC
Mfc controlled gas lines with rapid delivery system;
1) thermal gas precursors (e.g. NH3, O2)
2) plasma gases (e.g. O2, N2, H2)
2 internally.
Up to 8 in externally
mounted gas pod
Up to 10 in externally mounted gas pod
Plasma Option/field upgrade Option
Loading Open load Loadlock or cassette
Clusterable to other process modules No Yes - inc third party MESC modules as special option
Wafer stage temperature range 25ºC – 400ºC 25ºC – 400ºC (550ºC option)
Ellipsometry ports Yes Yes
Swagelok 10ms rapid pulsing ALD valves Yes Yes

FlexAL Image Gallery



FlexAL Operator Loading Wafer

FlexAL Operator Loading Wafer



Related Processes


Ruthenium (Ru) Atomic Layer Deposition (ALD)


Hafnium Nitride (HfN) Atomic Layer Deposition (ALD)


Strontium Titanate (SrTiO3) Atomic Layer Deposition (ALD)


Tantalum Pentoxide (Ta2O5) Atomic Layer Deposition (ALD)

Related Process Techniques

Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD)

Atomic layer deposition (ALD) Oxford Instruments' ALD systems include the FlexAL and the OpAL.

Related Tools



Open loaded thermal ALD tool with plasma option

Tool Support

Flexible Support Agreements

Flexible Support Agreements

Tailored Service Contracts: Choose options that suit you

Pre-Purchased Service Fund

Pre-Purchased Service Fund

Our Pre-Purchased Services Fund gives you 10% more spending power