GaN/AlGaN ICP & RIE

Typical GaN Etch structure

Process Specification
PR masked GaN-AlGaN etching in the PlasmaProTMSystem133-ICP380 with Active Spacer

Batch sizes	up to 27 x 2” and 7 x 100mm
Etch rate	> 140nm/min

Process Specification
PR masked GaN/AlGaN etching in the PlasmaProSystem100-ICP180

Single Wafer	up to 200mm
Etch rate	> 750nm/min (single wafer only with clamping)

Etched GaN showing vertical profile

Process Specification
Hard masked GaN/AlGaN etching in the PlasmaProTMSystem133 ICP380 with Magnetic Spacer

Batch sizes	up to 27 x 2” and 7 x 100mm
Etch rate	> 300nm/min

Process Specification
GaN/AlGaN batch etching in the PlasmaProTM System133 RIE

Batch sizes:	up to 20x2", 5x100mm
Etch rate	> 50nm/min


GaN mesa with hard mask still in place	A laser endpoint trace for a typical GaN etch down to an Al2O3 substrate.

Additional Notes:

Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
Some variation in etch rate, selectivity and profile will be observed between wide features and narrow features. Etch rate, profile, and selectivity data given above applies to wide features. Mask is PR unless otherwise stated
Profiles quoted require original mask profile to be >85°
Edge exclusion for uniformity measurements is 3mm
Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern: