Silicon Carbide Etch

Process Specification
SiC etching in the PlasmaProTM System133 RIE

Additional Notes:

• Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
• Some variation in etch rate, selectivity and profile will be observed between wide features and narrow features. Etch rate, profile, and selectivity data given above applies to wide features. Mask is PR unless otherwise stated
• Profiles quoted require original mask profile to be >85°
• Edge exclusion for uniformity measurements is 3mm
• Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern: