Low Temperature ICP-CVD SiNx Deposition using PlasmaProTMSystem 100-ICP380
Process Specification:
| Deposition rate |
> 8nm/min |
| Wafer Size |
4" or 6" |
Low Temperature ICP-CVD SiNx Deposition using PlasmaProTMSystem 100-ICP180
Process Specification:
| Deposition rate |
> 8nm/min |
> 40nm/min
(rates up to 80nm/min have been achieved) |
| Wafer size |
2", 4", 6" |
2", 4", 6" |
|
Wet etch rates
(BHF 10:1 at 20°C) |
<100nm/min
(Typical values 20-30nm/min)
(deposition temperature = 70°C) |
<100nm/min
(Typical values <6nm/min)
(deposition temperature = 150°C) |
|
Film Thickness Uniformity over 100mm wafer |
Effect of Gas Ratio on Refractive Index |
Effect of Pressure on Film Stress |
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 |
 |
Process features:
- Deposition rate and refractive index control independent of wafer loading
- Uniform optical film properties
- Very dense films at low temperatures
- Low damage deposition onto temperature sensitive substrates