Sapphire Etching - ICP & RIE

Typical Sapphire Etch structure

Process Specification
PR masked Sapphire etching in the PlasmaProTMSystem133 ICP380 with Magnetic Spacer

Etch rate

> 75nm/min

Batch sizes

up to:

Typical hard masked etched sapphire

Process Specification
Hard masked Sapphire etching in the PlasmaProTMSystem133 ICP380 with Magnetic Spacer

Etch rate

> 150nm/min

Batch sizes

up to:

Etched Sapphire with hard mask (still in place)

Process Specification
GaN-AlGaN etching in the PlasmaProTMSystem133 RIE

Etch rate

> 10nm/min

Batch sizes

up to:

Additional Notes:

Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
Some variation in etch rate, selectivity and profile will be observed between wide features and narrow features. Etch rate, profile, and selectivity data given above applies to wide features. Mask is PR unless otherwise stated
Profiles quoted require original mask profile to be >85°
Edge exclusion for uniformity measurements is 3mm
Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern: