Failure Analysis

A unique family of de-processing solutions for Failure Analysis

These flexible failure analysis tools allow a whole range of processes from passivation removal to anisotropic oxide removal, from small die or packaged device through to 300 mm wafers.

Benefits

Flexible processes using either RIE/PE or ICP
Advanced die process: Etch rate 20 times faster than standard RIE processes using the Plasma Accelerator

Results
Applications
System Features


After nitride passivation removal	After IMD Etch	Four metal layers exposed

Applications

Isotropic polyimide removal (RIE or ICP mode)
Isotropic Nitride (passivation) removal (PE or ICP mode)
Anisotropic Oxide (IMD/ILD) removal (RIE or ICP mode)
Anisotropic Low-K Oxide removal (RIE or ICP mode)
Metal skeleton removal (RIE or ICP mode)
Poly-Si removal (RIE mode)
Al and Cu removal (ICP mode)
Backside Bulk Si removal (ICP mode)

Broad product range:

PlasmaProTM FA300 is a dual-mode RIE/PE tool for 300mm wafer processing
PlasmaPro NGP FA 200 ICP is a fast and low damage tool for small die and packaged devices
PlasmaPro NGP FA200 is a dual-mode for 200mm wafer processing
TEOS process for gap fill

Feature	PlasmaPro FA300	PlasmaPro NGP FA 200 ICP	PlasmaPro NGP FA200
Electrode Size	380mm or 460mm	240mm	240mm
Wafer Size	Up to 300mm	Up to 200mm	Up to 200mm
Loading	Open load	Open load	Open load
Generator Frequency Range	RF (13.56MHz)	RF (13.56MHz)	RF (13.56MHz)
Plasma Mode	RIE/PE	RIE/PE	RIE/PE
Wafer stage temperature	0ºC – 80ºC	0ºC – 80ºC	0ºC – 80ºC
Process gases	CHF₃, Ar, CF₄,O₂	CHF₃, Ar, CF₄,O₂	CHF₃, Ar, CF₄,O₂
Plasma accelerator	Yes	Yes	No