PlasmaProTM NGP®FA200 ICP - ICP Failure Analysis Tool

Plasmalab®µEtchICP
PlasmaPro NGP FA200 ICP

PlasmaPro NGP FA200 ICPoffers flexible processes for various sizes of die and packaged devices in either ICP or RIE mode

Front end removal process:

  • Removal of :
    - Isotropic Polyimide
    - Isotropic Nitride
    - Anisotropic Oxide (IMD/ILD)
    - Low-k Oxide
  • Exposure of at least 6 metal layers without delaminating
  • Selectivity control for SiO2/SiNx spacer removal
  • Poly-Si etch
  • FA decoration or delineation

Back end removal process:

  • Fast removal of bulk Si, then STOP on BOX
  • BOX (buried oxide), then STOP on thin active Si layers
  • Thin active Si layers removal

Endpoint for FA de-process

  • Laser interferometry end-point detection can be used on layer removal steps.
  • Multi-step recipes using laser endpoint can be written to provide a fully automated Failure Analysis capability.
  • ICP  
  • Process Tool Software 
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Click right hand side link to view more information on ICP process technique

Click right hand side link for more information on applicable processes 

We work closely with our customers to develop new and customised processes according to their application needs; please contact us for details.

Oxford Instruments’ PC2000TM software is clear, easy to use, quick to learn and configured exactly for the customer’s system. Its visual interface controls and monitors the process tool, and offers the ability to control a tool cluster from a single interface and PC.

Process ‘recipes’ are written, stored and recalled through the same software, building into a process library. In cassette-to-cassette and cluster systems, the users can associate individual recipes with each wafer to be processed, and run a complete set of process steps, loops and repeats.

Password-controlled user login allows different levels of user access and tasks, from ‘one-button’ run operation to full system functions. Continuous process data logging ensures traceability of each wafer and process.

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