Ion Beam Etch - Ion Beam Etching

Chamber Layout - Click for larger image
Ion Beam Etch Chamber Diagram

Ion Beam Deposition from Oxford Instruments

Process type

  • IBE - Inert Gas Ion Beam Etch
  • RIBE - Reactive Ion Beam Etch
  • CAIBE – Chemically Assisted Ion Beam Etch

Hardware

  • Choice of 15cm and 35cm RF ion Sources
  • High current neutraliser
  • Upto 8 inch rotatable and tiltable substrate platen with heater and cooler
     
  • Choice of single wafer load-lock and cassette to cassette multi-wafer handler
  • Modular design for easy configuration into a multi-functional cluster tool
  • Variable interface configuration with clean room
  • Option of SIMS for end point detection

 

  • Key Applications 
  • Benefits 
  • Ion Beam Etch Systems 
  •  
  •  

 Thin film magnetic heads

Thin film magnetic heads

Key Applications of Ion Beam Etch:

  • GaAs Opto-electronics
  • Microwave integrated circuits
  • InP laser optics
  • Thin film magnetic heads/MRAM
  • SAW (Surface Acoustic Wave) devices
  • Mask fabrication
  • Blazed Gratings

Benefits of Ion Beam Etch

  • Excellent uniformity
  • Maximum flexibility Range of applications
  • Process repeatability
  • Low cost of ownership

Ion Beam Etch Tools from Oxford Instruments

 Feature:

Ionfab 300Plus (SC)  

Ionfab 300Plus (LC)

 Platen size  Up to 4 inch wafer  Up to 8 inch wafer
 Platen rotation Up to  20rpm Up to 20rpm
 Platen tilt angle -90ºC to +75 ºC -90ºC to +75ºC
 Platen temperature  10ºC to 300ºC 10ºC to 300ºC
 Ion source  15cm RF ion source  35cm RF ion source
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Related Products

Ionfab 300Plus
Ion Beam Etch & Deposition Tool

Downloads And Links
Plasma Technology Processes
Ion Beam Etch Processes