ICP CVD Diagram
Inductively Coupled Plasma - Chemical Vapour Deposition (ICP-CVD)
Key Features
- Independent control of ion energy and ion current density
- Typical process pressure: 1- 10 mtorr
- Plasma density: circa 5 x E11 / cm2
- Plasma in contact with the substrate
- Low energy ion current during deposition
- Ion Current (Plasma Density) dependent on ICP power
- ESS (electrostatic screen) for a purely inductive plasma
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Applications
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System Features
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Typical Applications of ICP CVD:
- Low temperature deposition for lift off technology
- Low temperature deposition of very high quality SiO2
- Low temperature deposition of polySi
- ICP is fully automatic (2 RF automatch units)
ICP CVD Tools from Oxford Instruments
| ICP |
ICP65 |
ICPCVD180 |
ICPCVD380 |
| Electrode size |
240mm |
240mm |
Up to 330mm |
| Loading |
Open Load |
Load locked |
Load locked |
| Substrates |
50mm wafers |
150mm with carriers options available for multi-wafers or small pieces |
200mm with carriers options available for multi-wafers or small pieces |
| Dopants |
No |
Various dopants available which include PH3, B2H6, GeH4 |
Various dopants available which include PH3, B2H6, GeH4 |
| Liquid Precursors |
No |
No |
No |
| MFC controlled gaslines |
8 or 12 line gas box available |
8 or 12 line gas box available |
8 or 12 line gas box available |
| Wafer stage temperature range |
20°C to 400°C |
0°C to 400°C |
0°C to 400°C |
| Insitu plasma clean |
Yes |
Yes |
Yes |