Plasma Enhanced Chemical Vapour Deposition (PECVD)
PECVD Chamber Diagram
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Key features
- Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode
- Substrate sits directly on heated electrode
- Gas injected into process chamber via “showerhead” gas inlet in the top electrode
- 0.5-1.0 Torr operating pressure
- 0.02-0.1 Wcm-2 power density
Benefits of PECVD
- Lower temperature processes compared to conventional CVD
- Film stress can be controlled by high/low frequency mixing techniques
- Dry plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning
- Control over stoichiometry via process conditions
- Offers a wide range of material deposition, including:
- SiOx, SiNx and SiOxNy deposition for a wide range of applications including photonics structures, passivation, hard mask, etc.
- Amorphous silicon (a-Si:H)
- TEOS SiO2 with conformal step coverage, or void-free good step coverage
- SiC
- Diamond-like carbon (DLC)
Plasma Enhanced Chemical Vapour Deposition Systems from Oxford Instruments
| Electrode size |
240mm |
460mm |
240mm |
330mm |
| Loading |
Open Load |
Open Load |
Load locked |
Load locked |
| Substrates |
See product brochure |
See product brochure |
200mm with carriers options available for multi-wafers or small pieces |
300mm with carriers options available for multi-wafers or small pieces |
| Dopants |
No |
No |
Various dopants available which include PH3, B2H6, GeH4 |
Various dopants available which include PH3, B2H6, GeH4 |
| Liquid Precursors |
No |
No |
Yes: TEOS |
Yes: TEOS |
| MFC controlled gaslines |
8 or 12 line gas box available |
8 or 12 line gas box available |
8 or 12 line gas box available |
8 or 12 line gas box available |
| RF Switching for Stress Control |
Yes |
Yes |
Yes |
Yes |
| Wafer stage temperature range |
20°C to 400°C |
20°C to 400°C |
Standard 20°C to 400°C with option for upto 800°C |
Standard 20°C to 400°C with option for upto 700°C |
| Insitu plasma clean |
Yes |
Yes |
Yes. Endpoint available to ensure optimum clean time |
Yes. Endpoint available to ensure optimum clean time |