RIE/PE Schematic
Reactive Ion Etch - PE (RIE/PE) from Oxford Instruments
Typical applications
- Isotropic PE fotoimide etching
- Anisotropic RIE polyimide etching
- Isotropic PE SiN removal
- Anisotropic SiO2 RIE etching
Benefits of RIE/PE
- Substrate electrode cooled
- Top or bottom electrode RF driven (13.56 MHz)
- Automatic switching
- Shower head gas inlet (in the top electrode)
- Parameter: gas flows, pressure, RF power
RIE/PE Systems from Oxford Instruments
| Electrode size |
240mm |
460mm |
| Loading |
Open Load |
Open Load |
| Substrates |
See product brochure |
See product brochure |
| MFC controlled gaslines |
8 or 12 line gas box available |
8 or 12 line gas box available |
| Wafer stage temperature range |
10-80C° |
10-80C° |
| He Back side cooling option |
yes |
no |
| ICP option |
yes |
no |
| Focused plasma |
yes |
yes |