Reactive Ion Etch (RIE)

RIE - Reactive Ion Etch Chamber Diagram

Reactive Ion Etch (RIE)

Key features:

Gas injected into process chamber via “showerhead” gas inlet in the top electrode
Negative self-bias forms on lower electrode
Single RF plasma source determines both ion density and energy
Substrate is usually placed on a quartz or graphite “coverplate” to avoid sputtering/re-deposition of electrode material
5-500 mTorr operating pressure

Benefits of RIE

RIE Tools from Oxford Instruments

Feature	PlasmaPro NGP80	PlasmaPro 800Plus	PlasmaPro System100	PlasmaProSystem133
Electrode Size	240mm	460mm	240mm	330mm
Loading	Open Load	Open Load	Load Locked	Load Locked
Substrates	See product brochure	See product brochure	200mm with carriers options available for multi-wafers or small pieces	300mm with carriers options available for multi-wafers or small pieces
MFC controlled gaslines	8 or 12 line gas box available	8 or 12 line gas box available	8 or 12 line gas box available	8 or 12 line gas box available
Wafer stage temperature range	10-80C°	10-80C°	Minus 20C° to 80C°	Minus 20C° to 80C°
He Back side cooling option	yes	no	yes	no
ICP Option	yes	no	no	no
Focused Plasma	yes	yes	no	no

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Open Load Tool for RIE

Open Load Tool for Reactive Ion Etching

Load Locked Tool for RIE

Load Locked Tool for RIE