Silicon Dioxide Reactive Ion Beam Deposition (SiO2 RIBD)

Ionfab 300Plus

Silicon dioxide (SiO2) Reactive Ion Beam Deposition (RIBD)

• SiO2 RIBD in the Ionfab300Plus (LC)
• Pre-clean: 35cm source can pre-clean up to 200mm substrates
• Deposition Gases: Ar, O2
• Up to 200mm wafers
• Summary performance data:

Process specification

1. SiO2 deposition with rotation and adjustable tilt.

Optofab3000	Optofab3000 SiO2 uniformity

Silicon dioxide (SiO2) Reactive Ion Beam Deposition (RIBD) in the Optofab3000

Process Specification

• SiO2 RIBD in the Optofab3000
• Deposition Gases: Ar, O2
• Up to 200mm wafers

• Summary performance data:

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. SiO2 deposition with rotation and adjustable tilt.

Additional Notes:

1. Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
2. Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern:		Run-to-run uniformity (reproducibility) is calculated from average wafer uniformity in 5 consecutive runs.
		For refractive index uniformity is calculated as:       For refractive index uniformity is calculated as: