a-Si Deposition - Amorphous Silicon Deposition (PECVD)

Plasmalab System133 for PECVD

Amorphous Si Deposition (PECVD) 

Technology:

• Parallel Plate Reactor
• Shower Head Gas inlet
• SiH4 based process (PH3 , B2H6 for doping)

Results:

• Rate : 3 - 30 nm/min (controllable)
• Uniformity: +/- 4 % over 200 mm
• Reproducibility: +/- 2.5 %
• Stress < 200 MPa
• Undoped dark conductivity 10-10 - 10-12 S/ cm
• Undoped light conductivity 10-5 S/ cm
• Doped conductivity 10-2 - 10-3 S/ cm