Al2O3 Deposition - Aluminium Oxide Deposition

Remote Plasma ALD

• Process Chemistry : TMA, O2 plasma
• Growth per cycle : 1.0 Å/cycle @ 300ºC
• Refractive Index : 1.58 @25ºC - 1.64 @ 300ºC
• Uniformity: < ± 0.5 - 2 % (depending on substrate size)
• Repeatability < ± 1 %
• C < 2% , H < 2.5% (at 200 °C)
  Al2Ox, x = 3.05 by RBS and ERD
• Breakdown strength : > 8 MV/cm
• dielectric constant > 8.5

Thermal ALD

• Process Chemistry : TMA, H2O
• Growth per cycle : 1.0 Å/cycle @ 300ºC
• Refractive Index : 1.56 @120ºC - 1.62 @ 300ºC
• Uniformity: < ± 0.5 - 2 % (depending on substrate size)
• Repeatability < ± 1 %

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