HfN Deposition - Hafnium Deposition (radical assisted by remote plasma)

HfN ALD

OpAL® – A compact open-load system
for Atomic Layer Deposition (ALD)

Remote plasma ALD

A "remote plasma" makes sure, the substrates are NOT in contact with the plasma!

The remote plasma just cracks molecules, so that very reactive species can be used for the growth process.

Such reactive species often enable a very efficient plasma preclean of the substrates, lead to cleaner films and lower the deposition temperature.

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Related Information

Deposition Processes - Deposition Process
SiO2 Deposition - Silicon Dioxide Deposition
SiN Deposition - Silicon Nitride Deposition
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Indium Tin Oxide Magnetron Sputtering Deposition
Al2O3 - Aluminium Oxide Deposition
Ion Beam Deposition of VaO(5-x) - Vanadium Pentoxide Deposition
TiO2 Deposition - Titanium Dioxide Deposition
ZnO ALD - Zinc Oxide Atomic Layer Deposition
Hafnium dioxide Reactive Ion Beam Deposition (HfO2 RIBD)
La2O3 Deposition - Lanthanum(III) Oxide Deposition
Ru Deposition - Ruthenium Deposition
a-Si Deposition - Amorphous Silicon Deposition (PECVD)
DLC Deposition - Diamond like Carbon Deposition
SiC Deposition - Silicon Carbide Plasma Enhanced Chemical Vapour Deposition
SiGe Deposition - Silicon Germanium Deposition
PolySi Deposition - Polysilicon Deposition

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