Hafnium Dioxide Reactive Ion Beam Deposition (HfO2 RIBD)

Ionfab 300Plus for HfO2 RIBD

• Pre-clean: 35cm source can pre-clean up to 8”substrates
• Deposition Gases: Ar, O2
• Up to 200mm wafer size
• Summary performance data:

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. HfO2 deposition with rotation and adjustable tilt.

1. With 5mm edge exclusion, uniformity described below

2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

Optofab 3000 for HfO2 RIBD

• Deposition Gases: Ar, O2
• Up to 200mm wafers
• Summary performance data:

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

HfO2 deposition with rotation and adjustable tilt.

Notes: 

1. With 5mm edge exclusion
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

Additional Notes:

1. Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
2. Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern:		Run-to-run uniformity (reproducibility) is calculated from average wafer uniformity in 5 consecutive runs.
		For refractive index uniformity is calculated as:       For refractive index uniformity is calculated as: