Indium Tin Oxide (ITO) Sputtering
Sputtering of Indium Tin Oxide
Process Specification
Deposition Rate
> 30nm min1 (static table)
> 2nm min1 (rotating table)
< ± 3% (rotating table)
< ± 5% (static table)
< ± 5% (rotating table)
< ± 15% (static table)
1. Uniformity defined as + [(max-min)/(2*mean)]*100%
2. 6mm exclusion zone
3. Using 200mm magnetron
4. Thickness and uniformity are measured on silicon substrates
For more detailed process information please contact us for a full datasheet.
Process Benefits
Applications of ITO Sputtering
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