OpAL® – A compact open-load system
for Atomic Layer Deposition (ALD)
(Radical assisted by remote plasma)
Related Products:
FlexAL OpAL
Precursor: La(thd)3 [solid with low vapour pressure]
Plasma gas: O2
(does not react thermally with H2O)
Dose control by fast pulse ALD valve bubbled at 190° C
Deposition temperature: 250° - 300° C
0.18 A/ cycle (saturated dose at 300° C)
Refractive index 1.72 - 1.74
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates are NOT in contact with the plasma !
The remote plasma just cracks molecules, so that very reactive species can be used for the growth process.
Such reactive species often enable a very efficient plasma preclean of the substrates, lead to cleaner films and lower the deposition temperature