OpAL® – A compact open-load system
for Atomic Layer Deposition (ALD)
(Radical assisted by remote plasma)
- Precursor: La(thd)3 [solid with low vapour pressure]
- Plasma gas: O2
(does not react thermally with H2O)
- Dose control by fast pulse ALD valve bubbled at 190° C
- Deposition temperature: 250° - 300° C
- 0.18 A/ cycle (saturated dose at 300° C)
- Refractive index 1.72 - 1.74
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates are NOT in contact with the plasma!
The remote plasma just cracks molecules, so that very reactive species can be used for the growth process.
Such reactive species often enable a very efficient plasma preclean of the substrates, lead to cleaner films and lower the deposition temperature