PolySi Deposition - Polysilicon Deposition

Si LPCVD rate (nm/ min) vs temperature (°C)
580° - 620°C: transition region

PolySi LP CVD & PECVD

Technology:

Rate:	> 40 nm/min
Uniformity:	< +/-2 % across 100 mm wafer
XRD and Raman analysis of the as deposited films demonstrate the crystalline nature of the films:	grain sizes > 100 nm and a degree of crystallinity > 80 %.
The polysilicon films grow preferentially along <1 1 0> orientation and crystallization occurs along <1 1 1> orientation.

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Polysilicon Deposition tool

Polysilicon Deposition System

Polysilicon Deposition system