OpAL for Atomic Layer Deposition
(Radical assisted by remote plasma)
Related Products:
FlexAL OpAL
Precursors:
Ru(EtCp)2, O2 or N2 /H2 plasma
Applications
Barrier layer, e.g Cu diffusion barrier
Metal electrode
GPC 0.38Å/cycle @ 350°C
Resistivity ~15µ ohm cm
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates are NOT in contact with the plasma!
The remote plasma just cracks molecules, so that very reactive species can be used for the growth process.
Such reactive species often enable a very efficient plasma preclean of the substrates, lead to cleaner films and lower the deposition temperature.