SiO2 Silicon Dioxide Deposition
170 nm TEOS SiO 170 nm TEOS SiO2
over a 1 µm step over a 1 µm step
Related Products:
System100 System133 System 80Plus System 800Plus
PECVD SiO2
- Process Chemistry : SiH4, N2O, N2
- Deposition Rate : 50 - 300 nm/min
- Refractive Index : typically 1.45-1.49
- Uniformity: < 3% deposition rate, <<1% refractive index
- Breakdown strength : > 8 MV/cm
- Film stress controllable: 0 to -0.5 GPa
- Pinhole / Particle Density: < 0.1 / cm2
Additionally, doped oxides (e.g. PSG, BSG, or BPSG) can be obtained by including phosphine or diborane in the gas mixture. This is useful for 'reflow' applications in which excellent step coverage and/or planarisation of surface topography is required. Doped oxides also find applications in optical waveguides, since the doping level provides accurate control over film refractive index.
TEOS SiO2PECVD Deposition
- Process Chemistry : TEOS, O2, Ar or He
- Deposition Rate : 30 - 100 nm/min
- Uniformity: < ± 3%
- Refractive Index : 1.44 - 1.46
- Uniformity: < ± 0.001
- Repeatability: < ± 0.001
- Step coverage: > 75 %, up to 90%
- no voids or "nano slits"
- Low N-H content for low loss films at 1550 nm
- Low stress (< 50 MPa) for > 50 µm thick films
- BHF etch rate 10 - 40 x thermal SiO2 at 13 MHz
1.5 x thermal SiO2 at kHz
ICP CVD SiO2 Technology:
- PECVD with ICP Source (2 or 13 MHz)
- Inductive Coupled Plasma
- RF driven substrate electrode
Results:
- Rate: > 5 nm/ min
- Temperature < 120 deg C
- Lift off compatible
- Refractive index 1.46
- Breakdown voltage > 8 MV/ cm
- Uniformity < +/- 4 % ( 100 mm wafer with ICP 380)