SiC Deposition - Silicon Carbide Deposition

Silicon Carbide Plasma Enhanced
Chemical Vapour Deposition Schematic

Technology:

• Parallel Plate Reactor
• Shower Head Gas inlet
• SiH4 based process

Results:

• Rate : > 50 nm/min
• Uniformity: + 4 % over 200 mm
• Reproducibility: +/- 2 %
• Stress: < 150 MPa
• Refractive Index: ca 2.6 (2.4 - 2.7)
• Good wet etch rate resistance