SiN Image caption courtesy of:
Sensitech (IMO) Wetzlar
Hr Castricher, Dr Schultheiss
Related Products:
System100 System133 System 80Plus System 800Plus
PECVD SiN - PECVD Silicon Nitride
PECVD with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
- Deposition temperature: 20 - 100 °C
- Low pressure (< 10 mtorr) for best electrical quality
- NH3 free process
- Rate: 5 - 100 nm/min
- Good uniformity over up to 6” wafer
- Breakdown voltage > 4 MV/ cm
- The refractive index can be adjusted from 1.77 to 2.54
- Stress: < 100 MPa
- Variable from 25 MPa compressive to 25 MPa tensile (without bias) for membranes
- No N-H bond absorption peaks found in infrared transmission spectra
ICP CVD SiN
- Conformal deposition
- Uniformity ± 2 - 4 % over one full batch
- Deposition rate 10 - 15 nm/min, max 100 nm/ min
- Refractive Index typically 2.0, but fully controllable 1.8 - 2.5
- Film stress fully controllable: -1 GPa to +0.5 GPa
- BHF (5:1) Etch Rate < 30 nm/min
KOH Etch Rate < 0.5 nm/ min
- Pinhole/particle Density < 0.1 / cm2
PECVD Ammonia free SiN
- Deposition temperature 250 - 350°C
- Deposition rate 7 - 12 nm/min
- Refractive index 2.00
- Film thickness variation (across table) < ± 3%
- Film thickness variation (run to run) < ± 2%
- Refractive index variation (across table) < ± 1%
- Refractive index variation (run to run) < ± 1%
- Etch rate (1:20 HF:DI water) < 20 nm/min *
- Breakdown voltage > 8.5 MV/cm stress < 50 MPa with frequency mixing
- Suitable for 330° C PECVD onto InP layers
- Produces stable film properties even at low deposition temperature (Approx 100° C)
- Stress control available using optional dual frequency (high and low) technique
* at 330° C, higher temperature processes provide lower BHF etch rate, but are not recommended for InP based wafers.