AlGaN/GaN/AlN Etching - Aluminium Gallium Nitride Etch

RIE GaN Etch

Courtesy of Infineon Munich,
ZT KM 4

GaN Etching: RIE with Smooth Walls
Rate: 70 nm/ min (2“ wafer)
Mask: photoresist
Selectivity for smooth 90° walls 2 : 1
Uniformity over 2" dia area:  < +/- 3 %

  •  Anisotropic etch with 90° walls
  • Very smooth walls

 

  • ICP Etching 
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ICP AlGaN Etch

8µm Deep Etch

Reactive Ion Etching with ICP Source (2 or 13.56 MHz)

  • Inductive Coupled Plasma
  • Anisotropic profile
  • Clean etch surface
  • Low ion induced damage

 

 

Process Chemistry Cl based
Substrate Electrode RF driven
Rate

0.5 - 1 µm/ min with SiO2 mask

0.3 µm/ min with photoresist mask

Selectivity to SiO2 5 - 10 1 to PR 1.15 : 1
Plasma Excitation 13.56 MHz

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Etch Processes - Etching Processes
GaAs/AlGaAs Etching - Gallium Arsenide/Aluminium Gallium Arsenide Etch
InSb Etching - Indium Antimonide Etch
InGaAlP Etching - Aluminium gallium indium phosphide Etch
GaSb Etching - Gallium Antimonide Etch
Deep GaP Etching - Gallium Phosphide Etch
InP Etching - Indium Phosphide Etch
ZnSe Etching Zinc Selenide Etch
InAlAs Etching - Indium Aluminium Arsenide Etch
InP/ InGaAsP Etching - Indium Phosphide/ Indium Gallium Arsenide Etch
GaN Etching, Gallium Nitride Etch, Gallium Nitride Etching
Aluminium Etch, Al Etching
Au Etching - Gold Etch
Cr Etching - Chromium Etch
Cu Etching - Copper Etch
Pr Etching - Photoresist Etch
Silyated Photoresist Etching - Silyated Photoresist Etch
Polyimide Etching - Polyimide Etch
PMMA Etching - Polymethyl Methacrylate Etch
PDMS Etching - Polydimethylsiloxane Etch
Diamond Etching - Diamond Etch
BCB ICP Etching - Benzocyclobutene Etch
LiNbO3 Etching - Lithium Niobate Etch
LiTaO3 Etching - Lithium Tantalum Oxide Etch
SiC Etching - Silicon Carbide Etch
PZT Etching - Lead Zirconium Titanate Etch
ITO Reactive Ion Etching - Indium Tin Oxide Etch
Al2O3 Etching - Aluminium Oxide Etch - Sapphire ICP Etching
PbSe Etching - Lead Selenide Etch
Bi2Te3 Etching - Bismuth Telluride Etch
Ta2O5 Etching - Tantalum Pentoxide Etch
GST Etching - Germanium Antimony Telluride Etching
Mo Etch - Molybdenum Etch
Nb Etching - Niobium Etch
Ni Etching - Nickel Etch
NiCr Etching - Nichrome Etch
Pt Etching - Platinum Etch
Ta Etching - Tantalum Etch
Ti Etching - Very Deep Titanium Etch
TiN Etching - Titanium Nitride Etch
W Etching - Tungsten Etch
WSi Etching - Tungsten Silicide Etch
Si Bosch Etching - Silicon Bosch Etch
Si Cryogenic Etching - Silicon Cryogenic Etch
Si Mixed Etching - Silicon (C4F8 - SF6) Etch
Silicon Hydrogen Bromide Etch (Si HBr)
Si (isotropic) Etching - Isotropic Silicon Etch
SiGe Etching - Silicon Germanium Etch
SOI Bosch Etching - Silicon-on-Insulator Bosch Etch
GaAs/AlGaAs Heterostructures: RIB/CAIBE Galium Arsenide/Aluminium Galium Arsenide Heterostructures: Reactive Ion Beam/Chemically Assisted Ion Beam Etch

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