Ni Etching - Nickel Etch

  • Plasma 
  • Ion Beam 
  •  
  •  
  •  

Inductively coupled plasma sources

Redeposition-free ICP Nickel Etch
0.5µm deep, PR removed

 Ni Etch

OPT application lab:1.4 µm Ni etch (PR Mask intact)

  • ICP 65 for up to 2” wafers
  • ICP 180 for up to 100mm wafers
  • ICP 380 for up to 200mm wafers
    Smaller wafer pieces may also be etched in each system.
  • ICP etching with RIE-biased and temperature-controlled wafer electrode
  • Argon sputter based process

 

Results:

  • Depth: >0.5µm
  • Etch Rate : >30nm/ min
  • Uniformity (single wafer 4"/ 6") < +/- 4 /5  %
  • Uniformity in "RIE" (12 wafer batch) < +/- 7 %
  • Uniformity in "RIE" or "ICP"
  • Selectivity over PR mask   >0.3:1
  • Selectivity to PR mask   ca 1 : 1 in "RIE"
  • Profile:     >70º
  • Redeposition: can be avoided
  • Ni >   8 nm/ min ("RIE" by Ar sputter etching)
     

Nickel (Ni) Ion Beam Etching (IBE)

 0.3 µm deep Ni etch
PR mask not removed

Process Specification

  • Ni IBE in the Ionfab300Plus (LC)
  • Process gas: Ar
  • Up to 200mm wafers
  • Summary performance data:

 Chamber base pressurea  <4e-7 Torr
 Load lock base pressureb  <2E-5 Torr

a. After 12 hours bake out at 80˚C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from  sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Notes:  

  • Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.
  • Some variation in etch rate, selectivity and profile will be observed between wide features and narrow features.
  • Etch rate, profile, and selectivity data given above applies to wide features. Mask is PR unless otherwise stated
  • Profiles quoted require original mask profile to be >85°
    Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern:

Click here for uniformity

 Click for uniformity

Process specification

1. Ni etch with rotation and adjustable tilt. 

 Parameter/Process  Ni etch
 Diameter etched  200 mm
 Mask  SiO2
 Gas chemistry  Ar
 Typical etch rate [nm/min]  20nm/min
 Uniformity [±%]3  <3
 Reproducibility [±%]  <3
 Selectivity to mask  0.81

Contact Us

Please click here if you would like additional information or assistance

Related Products

System 800Plus
Open Load Tool
System100
Load Lock Tool
Ionfab 300Plus
Ion Beam Etch & Deposition tool

Related Information

Etch Processes - Etching Processes
Etch Processes - Etching Processes
Gallium Arsenide/Aluminium Gallium Arsenide Etch (GaAs/AlGaAs)
GaAs/AlGaAs Etching - Gallium Arsenide/Aluminium Gallium Arsenide Etch
AlGaN/GaN Etching - Aluminium Gallium Nitride Etch
Indium Antimonide Etching (InSb)
InSb Etching - Indium Antimonide Etch
InGaAlP Etching - Aluminium gallium indium phosphide Etch
InGaAlP Etching - Aluminium gallium indium phosphide Etch
GaSb Etching - Gallium Antimonide Etch
GaSb Etching - Gallium Antimonide Etch
Deep GaP Etching - Gallium Phosphide Etch
Deep GaP Etching - Gallium Phosphide Etch
InP Etching - Indium Phosphide Etch
InP Etching - Indium Phosphide Etch
ZnSe Etching - Zinc Selenide Etch
ZnSe Etching Zinc Selenide Etch
InAlAs Etching - Indium Aluminium Arsenide Etch
InAlAs Etching - Indium Aluminium Arsenide Etch
InP/ InGaAsP Etching - Indium Phosphide/ Indium Gallium Arsenide Etch
InP/ InGaAsP Etching - Indium Phosphide/ Indium Gallium Arsenide Etch
GaN Etching - Gallium Nitride Etch
GaN Etching, Gallium Nitride Etch, Gallium Nitride Etching
Aluminium Etching (Al)
Aluminium Etch, Al Etching
Au Etching - Gold Etch
Au Etching - Gold Etch
Chromium Etching (Cr)
Cr Etching - Chromium Etch
Cu Etching - Copper Etch
Cu Etching - Copper Etch
Pr Etching - Photoresist Etch
Pr Etching - Photoresist Etch
Silyated Photoresist Etching - Silyated Photoresist Etch
Silyated Photoresist Etching - Silyated Photoresist Etch
Polyimide Etching (PI)
Polyimide Etching - Polyimide Etch
Polymethyl Methacrylate Etching (PMMA)
PMMA Etching - Polymethyl Methacrylate Etch
PDMS Etching - Polydimethylsiloxane Etch
PDMS Etching - Polydimethylsiloxane Etch
Diamond Etching - Diamond Etch
Diamond Etching - Diamond Etch
BCB ICP Etching - Benzocyclobutene Etch
BCB ICP Etching - Benzocyclobutene Etch
LiNbO3 Etching - Lithium Niobate Etch
LiNbO3 Etching - Lithium Niobate Etch
LiTaO3 Etching - Lithium Tantalum Oxide Etch
LiTaO3 Etching - Lithium Tantalum Oxide Etch
SiC Etching - Silicon Carbide Etch
SiC Etching - Silicon Carbide Etch
Lead Zirconium Titanate Etching (PZT)
PZT Etching - Lead Zirconium Titanate Etch
Indium Tin Oxide Etching (ITO)
ITO Reactive Ion Etching - Indium Tin Oxide Etch
Aluminium Oxide Etching (Al2O3 )
Al2O3 Etching - Aluminium Oxide Etch - Sapphire ICP Etching
PbSe Etching - Lead Selenide Etch
PbSe Etching - Lead Selenide Etch
Bi2Te3 Etching - Bismuth Telluride Etch
Bi2Te3 Etching - Bismuth Telluride Etch
Ta2O5 Etching - Tantalum Pentoxide Etch
Ta2O5 Etching - Tantalum Pentoxide Etch
GST Etching - Germanium Antimony Telluride Etching
GST Etching - Germanium Antimony Telluride Etching
Mo Etch - Molybdenum Etch
Mo Etch - Molybdenum Etch
Nb Etching - Niobium Etch
Nb Etching - Niobium Etch
NiCr Etching - Nichrome Etch
NiCr Etching - Nichrome Etch
Pt Etching - Platinum Etch
Pt Etching - Platinum Etch
Ta Etching - Tantalum Etch
Ta Etching - Tantalum Etch
Ti Etching - Very Deep Titanium Etch
Ti Etching - Very Deep Titanium Etch
TiN Etching - Titanium Nitride Etch
TiN Etching - Titanium Nitride Etch
W Etching - Tungsten Etch
W Etching - Tungsten Etch
WSi Etching - Tungsten Silicide Etch
WSi Etching - Tungsten Silicide Etch
Si Bosch Etching - Silicon Bosch Etch
Si Bosch Etching - Silicon Bosch Etch
Si Cryogenic Etching - Silicon Cryogenic Etch
Si Cryogenic Etching - Silicon Cryogenic Etch
Si Mixed Etching - Silicon (C4F8 - SF6) Etch
Si Mixed Etching - Silicon (C4F8 - SF6) Etch
Silicon Hydrogen Bromide Etch (Si HBr)
Silicon Hydrogen Bromide Etch (Si HBr)
Si (isotropic) Etching - Isotropic Silicon Etch
Si (isotropic) Etching - Isotropic Silicon Etch
Silicon Germanium Etching (SiGe)
SiGe Etching - Silicon Germanium Etch
Silicon-on-Insulator Bosch Etch (SOI)
SOI Bosch Etching - Silicon-on-Insulator Bosch Etch
GaAs/AlGaAs Heterostructures: RIB/CAIBE
GaAs/AlGaAs Heterostructures: RIB/CAIBE Galium Arsenide/Aluminium Galium Arsenide Heterostructures: Reactive Ion Beam/Chemically Assisted Ion Beam Etch

Downloads And Links