Polyimide Etching - Polyimide Etch

Deep Anisotropic Etch

Courtesy of: Uni Kassel,
Technische Physik

Polyimide Etching in the PlasmaProTM System100 ICP380 & PlasmaPro System100 ICP380

Etch Gases O2, N2
Plasma Clean Gases O2, SF6
Wafer Size
  • ICP380: Up to 200mm wafers
  • ICP180: Up to 100mm wafers
Etch rate      >1µm/min
Uniformity 

< ± 5% (7mm edge excl )

Reproducibility 

< ± 3 % (run to run)

Process Features

  • The process offers smooth anisotropic polyimide etching from 100nm to >50µm depths.
  • The process is very clean and will only require very occasional plasma cleaning
  • Laser interferometry can provide absolute depth control of ±0.25µm, with automatic process termination.


  • SEM Images 
  • Failure Analysis 
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 Polyimide Etch Polyimide Etch

Vertical 7µm deep polyimide structures etched by ICP using a metal mask

Polyimide ICP Etching for Failure Analysis in the PlasmaPro System133 ICP380

  • Recommended Etch Gases:  CF4, O2, N2
  • Recommended Plasma Clean Gases: SF6, O2
  • Up to 300mm wafers
  • Two step recipe stopping on nitride underlayer:

Polyimide etch rate     >800nm/min (average)
Uniformity  
Within wafer 

 < ± 6%  Step one only, 7mm edge exclusion applies

Run to run   < ± 6%
Selectivity to SiNx     >5:1

Process benefits

  • The flexibility of the ICP tool enables both isotropic and highly anisotropic etch processes
  • Clean removal of a wide range of materials is possible, without lifting of metal tracks
  • Excellent process repeatability
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Related Products

PlasmaPro System100
Load locked tool for Polyimide etching

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