Lead Zirconium Titanate Etching (PZT)

Pzt Etch
Anisotropic RIE etch of 1 µm PZT
(PR mask removed)

Lead Zirconium Titanate  (PZT) Etching from Oxford Insruments

A multi step process can be used to achieve vertical walls and about constant etch rates during an etch process through PZT and Pt. For stopping on Pt the PZT process can be optimised to achieve high selectivities to Pt (> 50 : 1). Endpoint detection by optical emission or laser interferometry is possible.

  • RIE 
  • ICP-RIE 
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Reactive Ion Etch of PZT:

  • Anisotropic etch
  • Approx 20 nm/ min
  • Selectivity to photoresist mask > 1 : 1
  • Selectivity to underlying Pt > 50 : 1
  • Uniformity ± 3 % (100 mm wafer)

Inductively Coupled Plasma Reactive Ion Etch of PZT

  • Anisotropic etch
  • 60 - 180 nm/ min
  • Selectivity to photoresist mask > 0.5
  • Uniformity ± 3 %(100 mm wafer)
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Related Products

PlasmaPro NGP80
Open Load Tool for PZT etching

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