Silicon Carbide Etching (SiC)

RIE Etch

Reactive Ion Etch of 200 nm SiC

Silicon Carbide Etching (SiC)

The properties of SiC - wide bandgap, high thermal conductivity, large breakdown fields, high saturated electron-drift velocity, and the ability to withstand extreme environmental changes - have made it a good choice for both electronic devices and MEMS. SiC comes in various grades but they all exhibit a strong bond strength which requires high ion flux to break.

  • ICP 
  • RIE 
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  •  
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 SiC Etch
 SiC Etching

Typical SiC features etched with the metal masked ICP etch process

Metal masked bulk crystalline SiC Etching in the PlasmaPro System100 ICP180

  • Etch Gases:  SF6, O2
  • Plasma Clean Gases: O2
  • Up to 100mm wafers

Process Features

  • The process offers smooth anisotropic SiC to >10µm depths.
  • The process chemistry is inherently clean and mean times to clean will be long.

 

Etch rate     > 300nm/min
Uniformity  
Within wafer 

< +/- 5%

(100mm wafer with 7mm edge excl.)

Etch rate     > 100nm/min
Uniformity  
Within wafer 

< +/- 3%

(edge excl. 2 inch - 5mm, 100mm - 7mm)

Wafer to wafer  < +/- 5%

SiC etching in the PlasmaPro System133 RIE

  • Recommended Etch Gases: NF3-N2O-Ar
  • Recommended Plasma Clean Gas: O2
  • Batch sizes up to 20 x 2", 5 x 100mm

 

Contact Us

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Related Products

PlasmaPro NGP80
Next Generation Plasma System for SiC Etching

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