Gallium Nitride on Sapphire templates may be used as a substrate for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
The following GaN epi on Sapphire are available:
- Undoped GaN
- n-GaN, Si-doped
- p-GaN, Mg-doped
- i-GaN, high resistivity, Zn-compensated
- a-plane GaN on r-plane Sapphire
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GaN Applications
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GaN on SiC
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- Ideal substrates for GaN homoepitaxial growth and device manufacturing.
- Excellent material for production, product development and fundamental research
- New type of substrate for GaN-based Blue/Green/White/UV LEDs.
- Substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
- Thick GaN is enabling new applications like High Brightness LEDs manufactured with Laser Lift Off
Gallium Nitride template on SiC
Applications
- GaN Epitaxial Wafers may be used as substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
- No buffer layer is required.
- GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.
Technology
- Gallium Nitride Epitaxial Wafer (template) consists of a thin undoped GaN epitaxial layer grown by Hydride Vapour Phase Epitaxy (HVPE) directly on (0001) Si face on-axis 6H-SiC or 4H-SiC substrate.
Additional information
- GaN layers and SiC substrates are electrically conducting. Silicon carbide ensures excellent heat removal from nitride device structure, which is important for high-power devices. GaN/SiC wafers may be cleaved providing mirror-like facets for nitride laser diodes.
- GaN layers could be grown on SiC substrates supplied by customers.