InN Epitaxial Growth - Indium Nitride Epitaxial Materials

Schematic cross section of InN/GaN/Sapphire sample

Indium Nitride Epitaxial Materials

TDI offers the availability of pilot samples of InN epitaxy.  InN materials consist of InN epitaxial layer deposited on GaN/sapphire template. 

We would be happy to satisfy your needs in InN and appreciate your feedback on desirable material parameters.

  • Material Parameters 
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Parameter

Value

Typical thickness of InN, microns

0.1-0.5

Initial Substrate

C-plane sapphire

Diameter, inch

2

Surface of InN

As grown

Electrical conductivity of InN

n-type 

Concentration Nd-Na, cm-3

> 5E18

Typical electron mobility, cm2/V sec

10-120

FWHM of x-ray RC omega-scan (00.2), arcsec

< 900

Optical band gap*, eV

~1.8

n-GaN layer thickness, microns

> 3

*Estimated based on CL and transmission reflection measurements

Ω 20 scan - Click for larger image X-Ray diffraction map - Click for larger image

XRD spectrum of InN/GaN on sapphire wafer, Ω 20 scan

2-inch InN-epi X-ray diffraction map (FWHM of omega-scan (00.2) rocking curve)
XRD omega-scan rocking curves (00.2) - Click for larger image (a) omega-scan rocking curves (10.2) - Click for larger image(b)    
XRD omega-scan rocking curves for InN (00.2) and (10.2) reflections (a) and (b), respectively.
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