InN Epitaxial Growth - Indium Nitride Epitaxial Materials

Schematic cross section of InN/GaN/Sapphire sample

Indium Nitride Epitaxial Materials

TDI offers the availability of pilot samples of InN epitaxy. InN materials consist of InN epitaxial layer deposited on GaN/sapphire template.

We would be happy to satisfy your needs in InN and appreciate your feedback on desirable material parameters.

Parameter	Value
Typical thickness of InN, microns	0.1-0.5
Initial Substrate	C-plane sapphire
Diameter, inch	2
Surface of InN	As grown
Electrical conductivity of InN	n-type
Concentration Nd-Na, cm-3	> 5E18
Typical electron mobility, cm2/V sec	10-120
FWHM of x-ray RC omega-scan (00.2), arcsec	< 900
Optical band gap*, eV	~1.8
n-GaN layer thickness, microns	> 3
*Estimated based on CL and transmission reflection measurements

	$X-Ray diffraction map - Click for larger image$
XRD spectrum of InN/GaN on sapphire wafer, Ω 20 scan	2-inch InN-epi X-ray diffraction map (FWHM of omega-scan (00.2) rocking curve)
(a)	(b)
XRD omega-scan rocking curves for InN (00.2) and (10.2) reflections (a) and (b), respectively.