Si Nanowire Growth - Silicon Nanowire Growth

NanoFab800Agile for Nanoscale Growth

Related Products:

System100         Nanofab700          Nanofab800Agile

• High temperature ramp rate allows anneal and different process steps to run at different temperatures within a reasonable time frame
• Plasma enables the catalyst thin film to form islands which would not form without at that temperature
• Plasma provides higher activation of catalyst leading to greater growth rate and denser tubes due to more catalyst sites being active
• Plasma enables etching native oxide in situ to encourage epitaxial growth

Technology:

• Parallel Plate Reactor
• Shower Head Gas inlet
• Temperature range: 350° - 600° C
• Vertical growth rate up to 150 nm/ min
• SNWs can be grown with or without plasma
• The plasma is also used to preclean the seed layer and to clean the process chamber