Si Nanowire Growth - Silicon Nanowire Growth

NanoFab800Agile
NanoFab800Agile for Nanoscale Growth

Related Products:

System100         Nanofab700          Nanofab800Agile

 

  • High temperature ramp rate allows anneal and different process steps to run at different temperatures within a reasonable time frame
  • Plasma enables the catalyst thin film to form islands which would not form without at that temperature
  • Plasma provides higher activation of catalyst leading to greater growth rate and denser tubes due to more catalyst sites being active
  • Plasma enables etching native oxide in situ to encourage epitaxial growth

Technology:

  • Parallel Plate Reactor
  • Shower Head Gas inlet
  • Temperature range: 350° - 600° C
  • Vertical growth rate up to 150 nm/ min
  • SNWs can be grown with or without plasma
  • The plasma is also used to preclean the seed layer and to clean the process chamber
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Related Products

Related Information

GaN Epitaxial Growth - Gallium Nitride Epitaxy on Sapphire Templates
AlN Epitaxial Growth - Aluminium Nitride Epitaxy
InN Epitaxial Growth - Indium Nitride Epitaxy
AlGaN on Sapphire- Aluminium Gallium Nitride Epitaxy on Sapphire
InGaN Epitaxial Growth - Indium Gallium Nitride Epitaxy
Carbon Nanotube Growth
ZnO Nanowire Growth - Zinc Oxide Nanowire Growth

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