Compound Semiconductor Templates - TDI

Gallium Nitride on Sapphire templates

GaN template may be used as a substrate for III-V nitride epitaxial growth by MBE, MOCVD and CVD.

The following GaN epi on Sapphire are available:

• Undoped GaN
• n-GaN, Si-doped
• p-GaN, Mg-doped
• i-GaN, high resistivity, Zn-compensated
• a-plane GaN on r-plane Sapphire

 Applications.

• Ideal substrates for GaN homoepitaxial growth and device manufacturing.
• Excellent material for production, product development and fundamental research
• New type of substrate for GaN-based  Blue/Green/White/UV LEDs.
• Substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
• Thick GaN is enabling new applications like High Brightness LEDs manufactured with Laser Lift Off

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Gallium Nitride template on SiC

Applications

• GaN Epitaxial Wafers may be used as substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
• No buffer layer is required. 
• GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.
   

Technology
Gallium Nitride Epitaxial Wafer (template) consists of a thin undoped GaN epitaxial layer grown by Hydride Vapour Phase Epitaxy (HVPE) directly on (0001)Si face on-axis 6H-SiC or 4H-SiC substrate.

 Additional information

GaN layers and SiC substrates are electrically conducting.  Silicon carbide ensures excellent heat removal from nitride device structure, which is important for high-power devices. GaN/SiC wafers may be cleaved providing mirror-like facets for nitride laser diodes. 

GaN layers could be grown on SiC substrates supplied by customers.

Aluminum Nitride Layers for III-V Nitride Epitaxy  and  High Frequency Applications

Two types of templates are available: 

1. Standard grade, usable area >90%

2. Research grade, usable area >80%

Research grade templates are supplied at reduced price subject of availability.

User benefits to use AlN templates

• Start growth on native AlN surface
• Simplify nucleation process (no buffer layer is needed)
• Reduce defect density in device structure
• Improve device parameters
• Increase epi productivity on existing growth equipment
• Reduce epi cost via throughput and yield increase
• Reduce maintenance cost
• Avoid possible patent contest issues related to buffer layer

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Thick crack free AlN on SiC template

Applications: semi-insulating substrate for:

• Power AlGaN/GaN-based High Electron Mobility Transistors ( HEMT)
• Power blue and UV LEDs, and Laser Diodes

Properties:

• High electrical resistivity and thermal conductivity
• Close lattice and thermal match with GaN and AlGaN layers
• Low defect density in device structures
• Thickness of AlN is sufficient to provide reliable insulation and low current leakage
• Fraction of price of semi-insulating SiC
• Positively tested at customers enabling dramatic cost reduction of final HEMT devices

Aluminum Gallium Nitride on Sapphire template

Two types of templates are available:

1. Standard grade, usable area >90%

2. Research grade, usable area >80%

Research grade templates are supplied at reduced price subject of availability.

User benefits to use AlGaN templates

• Start growth on native AlGaN surface
• Simplify nucleation process (no buffer layer is needed)
• Reduce defect density in device structure
• Improve device parameters
• Increase epi productivity on existing growth equipment
• Reduce epi cost via throughput and yield increase
• Reduce maintenance cost
• Avoid possible patent contest issues related to buffer layer

Indium Nitride Epitaxial Materials

TDI announces availability of pilot samples of InN epitaxy.  InN materials consist of InN epitaxial layer deposited on GaN/sapphire template. 

Indium Nitride Layers for Sensors and  High Frequency Applications

Schematic cross section of InN/GaN/Sapphire sample

TDI announces availability of pilot samples of InN epitaxy.  InN materials consist of InN epitaxial layer deposited on GaN/sapphire template.

We would be happy to satisfy your needs in InN and appreciate your feedback on desirable material parameters.

Material Parameters

*Estimated based on CL and transmission-reflection measurements

2-inch InN-epi X-ray diffraction map (FWHM of omega-scan (00.2) rocking curve)

(a)	(b)

XRD omega-scan rocking curves for InN (00.2) and (10.2) reflections (a) and (b), respectively.

XRD spectrum of InN/GaN on sapphire wafer, Ω 20 scan

InxGa1-xN Template Substrates

 Typical parameters of InxGa1-xN layers

Fabrication method: hydride vapour phase epitaxy (HVPE)

For GaN on sapphire template parameters download our datasheet

X-Ray diffraction spectrum (a) and ω-scan rocking curve (b) measured for InGaN layer grown on GaN/Sapphire