Indium Nitride Epitaxial Materials
TDI announces availability of pilot samples of InN epitaxy. InN materials consist of InN epitaxial layer deposited on GaN/sapphire template.
Indium Nitride Layers for Sensors and High Frequency Applications
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| Schematic cross section of InN/GaN/Sapphire sample |
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TDI announces availability of pilot samples of InN epitaxy. InN materials consist of InN epitaxial layer deposited on GaN/sapphire template.
We would be happy to satisfy your needs in InN and appreciate your feedback on desirable material parameters.
Material Parameters
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Typical thickness of InN, microns |
0.1-0.5 |
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Initial Substrate |
C-plane sapphire |
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Diameter, inch |
2 |
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Surface of InN |
As grown |
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Electrical conductivity of InN |
n-type |
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Concentration Nd-Na, cm-3 |
>5E18 |
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Typical electron mobility, cm2/V sec |
10-120 |
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FWHM of x-ray RC omega-scan (00.2), arcsec |
<900 |
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Optical band gap*, eV |
~1.8 |
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n-GaN layer thickness, microns |
>3 |
*Estimated based on CL and transmission-reflection measurements

2-inch InN-epi X-ray diffraction map (FWHM of omega-scan (00.2) rocking curve)
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(b) |
XRD omega-scan rocking curves for InN (00.2) and (10.2) reflections (a) and (b), respectively.

XRD spectrum of InN/GaN on sapphire wafer, Ω 20 scan