Our multi-wafer Hydride Vapour Phase Epitaxy Reactor CrystalFlex®, provides advanced epitaxial growth control. It is a cost effective route for the production of high quality epitaxial GaN, AlGaN and AlN single crystal materials.
- The equipment is designed for R&D or full scale production of Group III nitrides with the focus on process stability,
reproducibility, and optimal source materials usage.
- The flexible reactor configuration enables end users to grow a variety of products ranging from GaN to AlN and AlGaN with thickness from a few microns to hundreds of microns.
-
Benefits
-
System Automation
-
Specifications
-
Process
-
System Benefits:
- Wide range of growth rates from 1 to 200 microns/hour
- GaN thickness from a few microns up to a few millimeters
- N- and p-type dopants available
- Flexible wafer size configuration from 50mm to 150mm
- High quality, crack free epitaxial films with excellent thickness uniformity
- Customized source configurations to allow material growth of Group III nitrides for different applications
Operating Benefits:
- Atmospheric operation – no vacuum facilities required
- Low operating cost – no expensive metalorganics required
- Reduced downtime – easily replaceable growth liners to combat parasitic deposition
- Clean and controlled environment – N2-purge glovebox enclosure to reduce particle contamination of wafers and source material
- Efficient service support – dedicated global service support team with fast response
 |
|
PC4000 software user interface |
Process Software Control:
- Front end display of key process parameters
- Process recipes are written, stored and recalled through the same software, building a library
- Password controlled user login allows different levels of user access
- Continuous system data logging ensures traceability of each waferand process run
Multi-mode operations for flexible epitaxial growth requirements:
- Single shot ‘stage-to-stage’ wafer transfer using on-screen front end software control
- Full system automation using pre-programmed software recipe for entire epitaxial growth run
|
Growth Rate
Growth Pressure
Maximum Furnace Temp
Carrier Gas
Reactant Gas |
Up to 200 microns/hour
Atmospheric operation
1200°
Inert gas of N2 or Ar
HCl and NH3 |
|
50mm
75mm
100mm
150mm |
12
4
3
1 |
The HVPE Process
- The HVPE process for the growth of Group III nitrides is based on two-step thermodynamic-driven, chemical
reaction between metallic sources of (Ga, Al, and In), HCl and ammonia at temperatures of 1000 - 1100°C and
atmospheric pressure. It provides a simple and cost effective way to grow Group III nitrides.
Process Improvement:
- Proprietary gas injector design for uniform gas flow
- High capacity source boat design for increased uptime
- Extended thermal flat zone for excellent thickness uniformity
- Process support by a highly experienced team of scientists with in-depth process knowledge of HVPE