Nanofab™800Agile - Tool for Nanoscale Growth

Nanofab800Agile™

The Nanofab800Agile delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control.

Nanofab - Nanoscale Growth Systems

  • Variable sample sizes up to maximum 200mm wafers
  • PECVD film capability
  • Metal organic (MOCVD) precursor delivery for compound semiconductor nanowires
  • Aligned growth and control of film stress
  • Excellent temperature uniformity, and flexible  agility control
  • Ability to process in high pressure and high flow regimes
  • Optional liquid source delivery system
  • Vacuum load lock to provide seperate sample preperation and process operation
  • Features 
  • Electrode Features 
  • Thermal Response  
  • Process Benefits 
  • Support 

Nanofab800Agile process tool features:

Development opportunities exist to incorporate additional magnetic or eledctrical fields, to influence the growth of the nanostructures.

  • Controllable growth of nanotubes and nanowires with flexible temperature up to up to 800 °C
  • Agile heating and cooling for rapid turnaround
  • PECVD - Standard and high temperature deposition
  • High temperature electrode

Nanofab800Agile High temp electrode

Nanofab800Agile
High temperature electrode

Nanofab800Agile High Temperature Electrode features:

  • High temperature capability: up to 800°C
  • Fast cycle times: ramp rates up to 130°C/min
  • Thermal uniformity (< ±1%)
  • Long life: shock resistant materials
  • Renewable susceptor
  • Independent lower electrode earthing
  • Simple design for ease of service

Thermal Response

  • A key advantage of Oxford Instruments’ technology is the use of low thermal mass, shock resistant materials, capable of high power densities.
  • Ramp rates for heating have been demonstrated as high as 130 °C/minute using our custom designed PBN plate based heater while conventional sintered ceramics are limited to ~15 °C/minute.

Nanofab System Process Benefits

  • Controllable growth of nanotubes and nanowires
  • Plasma pre-treatment of the catalyst for enhanced growth
  • Annealing capabilities up to 800 °C
  • Broad range of PECVD film deposition with excellent uniformity, high deposition rates and control of film properties such as refractive index, stress, electrical characteristics and wet chemcial etch rates

 

Nanostructured Materials C, Si, Ge, ZnO, Ga2O3, GaN, GaAs, GaP, InP, InN
PECVD Films SiO2, SiNx, a-Si, SiON, poly-Si, SiC

 - A Global Reach

Oxford Instruments is committed to supporting our customers’ success. We recognise that this requires world class products complemented by world class support. Our global service force is backed by regional offices, offering rapid support wherever you are in the world.
 

 Service Centres*   Parts Centres

Europe & Middle East

Montevrain, France
Wiesbaden, Germany
Haifa, Israel
St Petersburg, Russia
Moscow, Russia
Bristol, UK

USA

Arizona, USA
Texas, USA
San Francisco, CA, USA
Concord, MA, USA

Asia

Beijing, China
Guangzhou, China
Shanghai, China
Hong Kong
New Delhi, India
Mumbai, India
Calcutta, India
Bangalore, India
Tokyo, Japan
Kyungki-do, Korea
Penang, Malaysia
Singapore
Taiwan County, Taiwan

Asia

Shanghai, China
Taiwan County, Taiwan

EMEA

Bristol, UK

USA

Concord, MA, USA

*Includes agents with OIPT trained engineers

For information on our Flexible Support Agreements please visit our Support pages

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