Open Load Atomic Layer Deposition (ALD) System - OpAL

OpAL ALD System

Compact open-load system for Atomic Layer Deposition (ALD)

OpAL® introduces a unique thermal ALD tool with a clear and easy upgrade route to plasma, providing both plasma and thermal ALD in a single compact tool. 

  • Open loaded thermal ALD tool with plasma option
  • Field upgrade available for plasma option
  • Small wafer pieces up to full 200mm wafers – equally suitable for academic and industry R&DThermal and/or plasma chemistries available for:
    • Oxides: HfO2, Al2O3, TiO2, SiO2, ZnO, Ta2O5
    • Nitrides: TiN, Si3N4
    • Metals: Ru, Pt

 

  • Benefits 
  • Applications 
  • Process Guarantees 
  • Features 
  •  

OpAL ALD System Benefits:

  • Vapour draw or bubbling of up to four liquid or solid precursors
     
  • Can be fitted with a nitrogen purged glove box with sample entry load lock for dry environment
  • Easily detachable liners reduce chamber cleaning times
  • In-situ analytical options including spectroscopic ellipsometry linked into ALD control software

Power ahead with intuitive software

    • Utilising the same software platform as our trusted PlasmaPro product family, the OpAL recipe-driven, multi-user level, PC2000TM control software is easy-to-use and tailored for rapid cycle ALD.

Example ALD applications:

  • Nano-electronics
  • High-k gate oxides
  • Storage capacitor dielectrics High aspect ratio diffusion barriers for Cu interconnects
  • Pinhole-free passivation layers for OLEDs and polymers
  • Passivation of crystal silicon solar cells
  • Highly conformal coatings for microfluidic and MEMS applications
  • Coating of nanoporous structures
  • Bio MEMS
  • Fuel cells

Our customers benefit from our process guarantees: controllable, repeatable processes developed in our own applications laboratory and backed by onsite process acceptance and support.

  • Up to 200 mm wafer with typical uniformity <±2%
  • Provides excellent step coverage even inside high aspect ratio structures
  • Offers superb thin film barrier properties
  • Low carbon contamination of Al2O3 (AES)
  • Amorphous, pin-hole free Al2O3 (TEM)
  • Excellent uniformity of HfO2, < ±2% on a 200 mm wafer (Spectroscopic Ellipsometry)

OpAL and FlexAL System Features:

Feature  OpAL  FlexAL
Substrates Up to 200mm wafers & pieces directly on stage Up to 200mm wafers handling and pieces on a carrier plate
Bubbled liquid & solid precursors Up to 3 Up to 4
Max precursor source temperature 200ºC (Jacket) 200ºC (Oven & jacket)
Wafer delivery (inc source pot) Included Included
Mfc controlled gas lines with rapid delivery system;
1) thermal gas precursors (e.g. NH3, O2)
2) plasma gases (e.g. O2, N2, H2)
2 internally.
Up to 8 in externally
mounted gas pod
Up to 10 in externally mounted gas pod
Plasma Option/field upgrade Option
Loading Open load Loadlock or cassette
Clusterable to other process modules No Yes - inc third party MESC modules as special option
Wafer stage temperature range

25ºC – 400ºC

25ºC – 400ºC (550ºC option)

Ellipsometry ports Yes Yes
Swagelok 10ms rapid pulsing ALD valves Yes Yes

Safety Features:

  •  Cabinet can be fitted to extraction lines and has nitrogen purge for assured health and safety compliance
  •  Pneumatic hoist for safe opening of chamber
  •  Can be fitted with extraction hood or nitrogen purged glove box for health and safety compliance
Contact Us

Related Products

Related Information

Related Applications & Markets

Downloads And Links