Physical Vapour Deposition System - PlasmaPro System400

PlasmaPro System400 PVD Tool

The PlasmaPro System400 offers the flexibility of dc, pulsed dc, rf and reactive magnetron sputtering for batch or single-wafer PVD processing in production or research & development

  • Wafer Handling 
  • Cluster Options 
  • Process Uniformity 
  • Materials 
  •  

Range of wafer handling options:

    • Single-wafer loadlock
    • Cassette loading
    • Clustered cassette-to-cassette via robotic wafer transfer 

Flexible Volume Throughput

Loading Capacity: 

Wafer size (mm) 

Capacity

 50

75

100

150

200

8

8

8

4

4

Clustered PlasmaPro System400 - Click for larger image 

PlasmaPro System400 clustered with an ICP380 and PECVD system, via a hexagonal robotic handler and wafer load/unload chamber

Clustering tools avoids oxidation and particle contamination as there is no exposure of the wafer to air between steps.  It also improves yield and throughput as it reduces handling damage and transfer times. The PlasmaPro System400 magnetron sputter tool may be clustered with other Oxford Instruments process tools, for example:

  • Etch processes - RIE or ICP (PlasmaPro System100, PlasmaPro System133)
  • Deposition - PECVD, ICP-CVD (PlasmaPro System100, PlasmaPro System133) or atomic layer deposition (ALD) (FlexAL

Optimum process uniformity and stability

Plasmalab System400 open - Click for larger image

Plasmalab System400 open - Click for larger image

  • Wafer table may be operated in either static or rotating mode
  • Uniformity masks can be fitted to further enhance uniformity, or removed for high-rate processes
  • rf bias offers plasma pre-cleaning
  • Loadlocked wafer entry minimises particle contamination
  • Optional cryo pump for moisture-sensitive applications

Typical uniformity:

 100 mm ± 3%
 125 mm ± 4%
 150 mm ± 5%

Full range of materials

    • Ability to sputter metals and oxides with film thicknesses from 20nm up to several µm
    • Suitable for full range of sputtered metals – from Al to Zr
    • Flexibility in processes and materials is enabled by the wide temperature range of the wafer table, with both water-cooling and heating up to 300 °C
    • rf bias allows plasma-assisted deposition for lower temperatures, greater adhesion and more flexibility in substrate material
    • Deposit multiple materials in one chamber in a single process
    • The System400 may be configured either with 4 x 200 mm or 6 x 100 mm rf and/or dc magnetrons. The single process chamber is divided into 4 or 6 sub-chambers, isolating the sources from each other without the high cost of clustering several single process chambers
    • Multi-layer processes are automated by process recipes in the PC2000TM process tool software, with its intuitive graphical interface and flexible user options
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