INCAPentaFET-x3

• Works on the widest range of applications from low energy and low counts to increased productivity and high counts.
• Collects up to x3 more data for the same beam current when compared to 10mm² Si(Li) or drift detector
• Or collects the same data in a 1/3 of the time
• Or collects the same data for a 1/3 of the beam current when compared to 10mm² Si(Li) or drift detector
• The ability to work at low beam currents reduces sample damage and contamination
• Excellent low energy performance for the lifetime of the detector
• Guaranteed resolution on your microscope and at a more realistic count rate of 4,000cps 
• Guaranteed <1eV shift in peak position and resolution between count rates of 1Kcps and 10Kcps
• Especially suited to FEGSEM
• Detection of elements down to Be
• Performance promises are guaranteed and tested on installation in line with ISO15632:2002
• Patented conditioning circuit, that removes crystal contamination ensuring optimum performance at all times
• All new Si(Li) detector combined with the uniquely stable INCAx-stream pulse processor to ensure you get the same results at 10,000cps as you do at 1,000cps

The large solid angle sensor in the INCAPentaFET-x3 makes it ideal suited to:

• Productive analysis at normal beam currents
• Low kV analysis
• Low probe currents
• Nanostructures
• Biological samples
• Light element analysis
• Beam sensitive samples
• Samples containing water or other volatile elements