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High brightness LEDs
Oxford Instruments offers a unique family of etch and deposition process solutions for high and ultra-high brightness LED (HB LED) production, assuring the highest possible throughput with the highest possible yield at key points in the production process.
Industry-leading capability
Our tools and processes offer:
- highest batch throughput
- excellent in-wafer uniformity
- excellent wafer-to-wafer uniformity
- excellent run-to-run uniformity
for processes in high brightness LED production, including:
- substrate etching of sapphire, SiC, GaN
- hard mask deposition (PECVD) and etch of SiO2 and SiNx
- etching of GaN, AlGaN, AlGaInP and related materials for device structures
- device isolation etch
- passivation deposition (PECVD)
Etch processes offer both reactive ion etching (RIE) and inductively coupled plasma (ICP) etch, with both hard mask and photoresist (PR) processes.
Process solutions for single wafer and batch HB LED production
Our etch and deposition process solutions cover from 4" single wafer through to the largest multi-wafer batch processes available for high brightness LEDs:
- up to 20 x 2" / 8 x 3" / 4 x 4" substrate and GaN, AlGaN, AlGaInP and related materials etch processes
- up to 40 x 2" / 19 x 3" / 10 x 4" hard mask deposition and etch, and passivation deposition
based on our Plasmalab®System133 and Plasmalab800Plus process tools for large batch production, and our PlasmalabSystem100 and Plasmalab80Plus tools for single wafer production or pilot/development lines.
High brightness LED (HB LED) array. Courtesy of Osram Opto Semiconductor
High brightness LED (HB LED) bulbs
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Related Information
Downloads and Links
- HB LEDs application brochure
(597Kb)