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Molecular beam epitaxy (MBE)

Proven systems for molecular beam epitaxy (MBE)

Our systems and products for molecular beam epitaxy offer the world-respected MBE technology of VG Semicon with the continued development and worldwide support of Oxford Instruments, proven on advanced device growth such as quantum cascade lasers (QCLs) and blue/violet laser diodes.

MBE products

Select one of our MBE reactor systems or sources from the Product Finder or Related Products sections on the right to learn more:

MBE reactors

V80H

MBE for research with production-proven technology

V90

MBE for research, device development and small-scale production

V100

Fully qualified production MBE

MBE sources

ThermaCell™ effusion sources

Unrivalled stability and composition control for III-V, II-VI and nitride MBE assured by industry-leading soft-action shutter design and ThermaCell source technology

ECell™As Arsenic cracker source

The ECellAs valved As effusion source or "cracker cell", designed for high performance MBE growth of Arsenic-containing III-V materials, offers significant benefits over the thermal control of conventional open sources

V90 molecular beam epitaxy (MBE) system

Product finder

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NEW - MBE software upgrade for V80H, V90 & V100

Discover enhanced software and hardware functionality for V80H, V90 & V100 MBE systems Click here or in Downloads and Links below

Global Customer Support & Service

Molecular beam epitaxy (MBE)