Plasmalab^®System100 plasma etch & deposition tool

Plasmalab®System100

A flexible and powerful solution for plasma etching and deposition processes. The load-locked wafer entry allows fast wafer exchange, the widest range of process gases and an extended process temperature range.

Allowing maximum process flexibility for compound semiconductor, optoelectronics, photonics, MEMS and microfluidics applications, the PlasmalabSystem100 can be configured for inductively coupled plasma (ICP) etching and deposition (ICP-CVD/HD-PECVD), reactive ion etching (RIE), plasma etching (PE) or plasma enhanced chemical vapour deposition (PECVD).

Key features

• 8" wafer handling, also allowing small batch (6 x 2") pre- and pilot production capability
• Options of single wafer/batch or cassette loading via the load-locked wafer entry. The PlasmalabSystem100 can be integrated into a cluster system with central robotic wafer handler and full cassette-to-cassette wafer handling for production processes.Substrate temperature control is provided by a range of electrodes, with a temperature range of -150 °C to +700 °C
• Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to the PlasmalabSystem100 to enhance etch control
• Options of a 6- or 12-line gas pod provides flexibility in processes and process gases, and may be remotely sited in the service area, away from the main process tool