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Plasmalab®System133 300 mm and large batch plasma etch and deposition tool
The PlasmalabSystem133 process tool offers 300 mm and large batch etch and deposition capability, with flexible configurations allowing ICP, RIE, PECVD and ICP-CVD (HD-PECVD) processes on a wide range of materials and device applications.
Product benefits
- 300 mm single wafer capability
- Industry-leading batch wafer processing of:
- 20 x 2"
- 8 x 3"
- 4 x 4"
- Options of single wafer/batch or cassette loading via the load-locked wafer entry: the PlasmalabSystem133 can be integrated into a cluster system with central robotic wafer handler and full cassette-to-cassette wafer handling for production processes
- Substrate temperature control is provided by a range of electrodes, with a temperature range of -150 °C to +700 °C
- Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to the PlasmalabSystem133 to enhance etch control
- Options of a 4-, 8- or 12-line gas pod provide flexibility in processes and process gases, and may be remotely sited in the service area, away from the main process tool
Processes
Contact us for details in our process performance datasheets on 300 mm and large-batch applications, for example:
- HB LEDs: industry-leading batch production performance for:
- GaN, AlGaN and related materials
- sapphire and SiC substrate etch
- 300 mm SiO2, SiNx deposition
- Diamond-like carbon (DLC) deposition and etch
We work closely with our customers to develop new and customised processes according to their application needs; please contact us for details.
Loading 20 x 2" wafer batch into the PlasmalabSystem133 plasma etch and deposition tool
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Downloads and Links
- TEOS PECVD delivery module brochure
(2,001Kb)
- HB LEDs application brochure
(597Kb)
- PlasmalabSystem100Pro Brochure
(1,598Kb)