Oxford Instruments specialises in the design, manufacture and support of innovative solutions, tools and systems for the emerging nanotechnology markets in areas such as XRF (X-ray Fluorescence) analysers , microanalysis systems, superconducting wires, NMR (nuclear magnetic resonance) magnets, cryogenic systems, plasma etch and deposition low temperature environments and coating thickness measurement.

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V90 molecular beam epitaxy (MBE) systems

V90 molecular beam epitaxy (MBE) system

V90 molecular beam epitaxy (MBE) systems

Molecular beam epitaxy for research, device development and small-scale production.

Key benefits

Maximum yield

  • Unrivalled stability and composition control ensure high device yield by ThermaCellTM source technology and unique soft-action shutters

Maximum flexibility

  • Configure for III-V, II-VI or nitrides
  • Use the widest range of materials with the 12 source deposition chamber

Maximum throughput

  • Ease of operation  and control through full automation and intuitive software interface
  • Handle 4 inch, 3 inch or multiple 2 inch epi wafers
  • Load up to 12 wafer platens at a time  with the cassette fast-entry chamber

Product details

The V90 is the MBE platform designed and focused to meet the needs of the semiconductor device development engineer and also to satisfy small to medium scale epi-wafer production.

The V90 incorporates many of the most advanced designs in MBE technology:

  • The ThermaCellTM is the most stable and reproducible evaporation source available
  • The latest generation of arc-motion, soft action shutters provide the lowest defect generation and source fallback capabilities in the technology
  • The manipulator can be fitted with the latest back-surface optical monitoring of the wafer temperature

The V90 is based on a thorough understanding of key parameters required to scale up from a research to production MBE system while maintaining the same high level of material quality:

  • The V90 is designed for simultaneous growth onto 3 x 2” or single (4”, 3”, or 2”) substrates.  Wafer transport can be fully automated and is integrated to the growth software.  Sample transfer has been designed to minimize the number of hand-offs for rapid load/unload times and maximum reliability
  • The deposition chamber incorporates all the necessary components for the controlled growth and doping of semiconductor materials, a complete range of effusion cells are available.  A monitoring ionisation gauge, RHEED system and residual gas analyser are used for growth and environment monitoring
  • The preparation chamber can be installed with outgassing and parking/storage facilities
  • The fast entry chamber/lock (FEL) is low-volume and integral with the preparation chamber. It allows a cassette of six sample holders to be loaded into the system at one time.  A cassette outgassing facility may be fitted in the entry lock
  • X-GEN3000TM process software runs under Windows XPTM with full password protection, allowing the System Manager to control the operations permitted to each user. The software enables automated flux calibration, display of chamber pressures and data logging

V90 molecular beam epitaxy (MBE) system detail

V90 MBE system

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NEW - MBE software upgrade for V80H, V90 & V100

MBE software upgrade for V80H, V90 & V100


Discover enhanced software and hardware functionality for V80H, V90 & V100 MBE systems Click here or in Downloads and Links below

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