As a leading provider of process solutions for a broad range of applications, Oxford Instruments is delighted to announce the development and launch of the SiC via plasma etch process using its high performance PlasmaPro 100 Polaris etch system.

Key Features:

  • High SiC etch rate enabling maximum throughput
  • Smooth sidewalls for problem free post etch metallisation
  • High selectivity to underlying GaN layer giving a smooth, low damage stop onto the GaN device layers
  • Clamping of sapphire carriers using Oxford Instruments’ unique patented Electrostatic Clamp technology ensuring excellent sample temperature control and maximum yield
  • Capability of etching SiC and GaN in the same tool through advanced plasma source technology
  • High utilisation provided by long Mean Time Between Cleans (MTBC)
Discrete Devices Brochure

Compound Semiconductor device process solutions

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